R&D, design, production and quality control consolidated with many years of outstanding experience. You can find our products everywhere heat treatment takes place.
Linn High Therm manufactures units for crystal growth of III/V compound semiconductors such as gallium arsenide Indium phosphide. The units are equipped with multi-zone heaters and work according to the VGF process (Vertical Gradient Freeze). Diameter up to 6 inch are possible.
For the production of silicon carbide single crystals, inductive heated sublimation reactors of LHT are used. Crystal diameter up to 4 inch can be produced.
Based on standard and special tube furnaces of the series FRV/FRH LHT builds units for the directional solidification according to the Bridgman - Stockbarger process.
Large inductive heated units of LHT are used for directional solidification of non-ferrous metals as well as for zone-refinement of Germanium.
Tube furnace, high temperature, gas and/or vacuum tight, Ø 25 - 150 mm, heated length 150 - 1000 mm, Tmax 1800 °C
Chamber furnace, high temperature, gas tight, Tmax 2100 °C, 3-52.5 l
Chamber furnace, high temperature, gas and vacuum tight, Tmax 1950 °C, 4 - 52.5 l
High frequency generator, 1,2 - 10 kW, 150 - 400 kHz
Medium frequency generator, 10kW - 1MW, 5 - 100 kHz
Bridgman directional solidification furnace
VGF furnace for 4” GaAs bulk crystal growth
Sublimation growth reactor for 4” SiC bulk crystal growth
High frequency generator, electron tube type, 300-800 kHz, 100 kW